features ? the 30nm long gate, only 75% the size of the cs100 transistors. ? 20 to 30% faster performance than the 90nm generation. ? transistor density doubled compared with the 90nm generation. ? sram cell area reduced 50% compared with the 90nm generation. 65nm cmos technology, CS200 / CS200a description as miniaturization of silicon devices progresses, fujitsu provides the most competitive, world-class technology to asic and cot customers. fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology. fujitsu will start tape-out acceptance for the technology in early 2006. specifications 65nm (CS200) 65nm (CS200a ) gate length 30nm 50nm core vdd 1.0v 1.2v gate oxide thickness (physical) 1.1nm 1.7nm gate electrode nisi / poly-si cosi2 / poly-si source / drain electrode nisi cosi2 interconnects 11-cu + 1-al s metal 1 pitch 0.18m s inter-level dielectric porous ulk (k = 2.25) s drain current enhancement advanced stress control s
?2005 fujitsu microelectronics america, inc. all company and product names are trademarks or registered trademarks of their respective owners. printed in the u.s.a. wfs-fs-21139-9/2005 fujitsu microelectronics america, inc. corporate headquarters 1250 e. arques ave. sunnyvale, ca 94088-3470 tel: (800) 866-8608 fax: (408) 737-5999 e-mail: inquiry@fma.fujitsu.com web site: http://us.fujitsu.com/micro 65nm cmos technology, CS200 / CS200a technology lineup fujitsu's foundry services offer an extensive ip lineup, including cpu cores, image cores, encryption, interface controllers and high-speed i/o, all prepared for 65nm asic. fujitsu provides a one-stop, turnkey packaging service, which includes package design, simulation, assembly and testing. packaging options include standard bga and flip-chip bga (fc-bga). fujitsu is the acknowledged global leader in advanced packaging technology, innovation, patents and manufacturing techniques. ip portfolio fujitsu provides two series of technology: CS200 for high-end use such as high-performance server cpu chips, and CS200a for low-power or mobile use. the CS200a technology, in particular, provides a great variety of transistors from low-leakage (ll) for cellular phones to ultra-high-speed (uhs) for servers or network devices. customer can mix the transistors in a chip to meet their needs. the 65nm family consists of the low-power CS200a and the high-performance CS200, giving customers the flexibility to choose the appropriate technology to differentiate their products. the hvt (high vth transistor) of the CS200 achieves higher performance. the i/o ranges from 1.8v to 3.3v. for the CS200a, 1.8 (2.5 or 3.3v) i/o-transistors can be embedded in a chip. the sram memory cell size is less than 0.6m2. spice simulations for some benchmarking circuits show that the new product is 20 to 30% faster than the previous version. the great performance improvement is a result of fujitsu's advanced tech- nology, which was developed for the company's high-performance servers. the chip size of the CS200 is only 60% the size of cs100, when making the same spec lsi, which is 4m gate logic and 2m gate macro. (sram: 0.5mbit, pll, etc.) CS200 circuit delay performance (ps per gate) CS200 cs100 delay reduction inverter 5.7 7.0 77% 2-input nand 8.7 11.4 69% 2-input nand + 200-grid interconnect load 23.1 30.8 67% CS200a: wide speed range + low power consumption speed high end server std-tr ll-tr leakage current server/ network digital consumer cellular phone std-tr hs-tr hv-tr low power lineup CS200a high performance lineup CS200 mobile computing uhs-tr fast uhs:ultra high speed, hs:high speed std:standard, ll:low leakage hs-tr large CS200a: wide speed range + low power consumption speed high end server std-tr ll-tr leakage current server/ network digital consumer cellular phone std-tr hs-tr hv-tr low power lineup CS200a high performance lineup CS200 mobile computing uhs-tr fast uhs:ultra high speed, hs:high speed std:standard, ll:low leakage hs-tr large technology families CS200a CS200 core i/o standard vdd uhs hs std ll hvt 1.8v 2.5v 3.3v 3.3v lvt 6t symmetry 1.2v 1.0v x xx xx x x xx xx x x 0.535 m2 0.595 m2 sram
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